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IXYH16N170C

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IXYH16N170C

IGBT 1.7KV 40A TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS XPT™ series IXYH16N170C is a high-voltage insulated gate bipolar transistor (IGBT) designed for demanding applications. This device features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 100 A. The IGBT is packaged in a TO-247-3 through-hole configuration. Key electrical parameters include a maximum on-state voltage of 3.8 V at 15 V gate-emitter voltage and 16 A collector current, a gate charge of 56 nC, and switching energies of 2.1 mJ (turn-on) and 1.5 mJ (turn-off) under typical test conditions (850 V, 16 A, 10 Ohm, 15 V). The operating temperature range extends from -55°C to 175°C. This component is suitable for use in power conversion systems, industrial motor drives, and high-voltage power supplies.

Additional Information

Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)19 ns
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 16A
Supplier Device PackageTO-247 (IXYH)
IGBT Type-
Td (on/off) @ 25°C11ns/140ns
Switching Energy2.1mJ (on), 1.5mJ (off)
Test Condition850V, 16A, 10Ohm, 15V
Gate Charge56 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)100 A
Power - Max310 W

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