IXYH120N65C3
DISC IGBT XPT-GENX3 TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™, GenX3™ series IXYH120N65C3 is a PT IGBT with a collector-emitter breakdown voltage of 650 V. This discrete IGBT features a maximum continuous collector current of 260 A and a pulsed collector current of 620 A. The device offers a low on-state voltage of 2.8 V at 15 V gate-emitter voltage and 100 A collector current. Switching characteristics include a typical turn-on delay of 28 ns and turn-off delay of 127 ns at 25°C, with a reverse recovery time of 29 ns. The IGBT has a maximum power dissipation of 1360 W and a gate charge of 265 nC. Designed for through-hole mounting in a TO-247-3 package, it operates across a wide temperature range of -55°C to 175°C. This component is suitable for applications in power conversion, industrial motor control, and renewable energy systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 29 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 100A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/127ns |
| Switching Energy | 1.25mJ (on), 500µJ (off) |
| Test Condition | 400V, 50A, 2Ohm, 15V |
| Gate Charge | 265 nC |
| Current - Collector (Ic) (Max) | 260 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 620 A |
| Power - Max | 1360 W |
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