IXYH120N65B3
DISC IGBT XPT-GENX3 TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH120N65B3 is a Disc IGBT from the XPT™, GenX3™ series, offered in a TO-247-3 package. This Power Transistor (PT) IGBT features a 650 V collector-emitter breakdown voltage and a continuous collector current (Ic) capability of 340 A, with a pulsed collector current (Icm) of 760 A. It boasts a maximum power dissipation of 1360 W and a low on-state voltage (Vce(on)) of 1.9V at 15V gate-emitter voltage and 100A collector current. Typical switching characteristics include a gate charge of 250 nC and a reverse recovery time (trr) of 28 ns. This component is suitable for applications requiring high voltage and current handling, often found in industrial power supplies, motor drives, and renewable energy systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 100A |
| Supplier Device Package | TO-247 (IXYH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/168ns |
| Switching Energy | 1.34mJ (on), 1.5mJ (off) |
| Test Condition | 400V, 50A, 2Ohm, 15V |
| Gate Charge | 250 nC |
| Current - Collector (Ic) (Max) | 340 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 760 A |
| Power - Max | 1360 W |
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