IXYH100N65C3
IGBT PT 650V 200A TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYH100N65C3 is a 650V, 200A N-channel \"Positive Temperature Coefficient\" (PT) Trench IGBT from the GenX3™, XPT™ series, presented in a TO-247-3 package for through-hole mounting. This component offers a maximum collector current of 200A, with a pulsed capability of 420A. Its on-state voltage (Vce(on)) is a maximum of 2.3V at 15V gate-source voltage and 70A collector current. The device exhibits excellent switching characteristics with specified switching energy of 2.15mJ (turn-on) and 840µJ (turn-off) under test conditions of 400V, 50A, 3 Ohm, and 15V. Typical turn-on and turn-off delays at 25°C are 28ns and 106ns respectively, with a gate charge of 164 nC. This high-power device is rated for a maximum power dissipation of 830W and operates across a wide temperature range of -55°C to 175°C. It is suitable for applications in power factor correction, induction heating, and motor control.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 70A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/106ns |
| Switching Energy | 2.15mJ (on), 840µJ (off) |
| Test Condition | 400V, 50A, 3Ohm, 15V |
| Gate Charge | 164 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 420 A |
| Power - Max | 830 W |
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