IXYF30N450
IGBT 4500V 23A ISOPLUSI4Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYF30N450 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) from the XPT™ series. This component features a collector-emitter breakdown voltage of 4500 V and a continuous collector current (Ic) of 23 A, with a pulsed collector current (Icm) capability of 190 A. Designed for efficient power handling, it offers a maximum power dissipation of 230 W. The IXYF30N450 utilizes standard input and is packaged in an ISOPLUS i4-PAC™ for through-hole mounting. Key parameters include a gate charge of 88 nC and typical turn-on/turn-off delays of 38 ns and 168 ns, respectively, at 25°C under test conditions of 960 V, 30 A, 15 Ohm, and 15 V. The on-state voltage (Vce(on)) is a maximum of 3.9 V at 15 V gate voltage and 30 A collector current. Its operating temperature range is from -55°C to 150°C (TJ). This device is suitable for high-voltage applications in industrial power supplies and motor control systems.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 30A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 38ns/168ns |
| Switching Energy | - |
| Test Condition | 960V, 30A, 15Ohm, 15V |
| Gate Charge | 88 nC |
| Current - Collector (Ic) (Max) | 23 A |
| Voltage - Collector Emitter Breakdown (Max) | 4500 V |
| Current - Collector Pulsed (Icm) | 190 A |
| Power - Max | 230 W |
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