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IXYB82N120C3H1

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IXYB82N120C3H1

IGBT 1200V 164A 1040W PLUS264

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYB82N120C3H1 is a robust N-channel trench IGBT from the GenX3™, XPT™ series. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 164 A, with a pulsed capability of 320 A. It offers a low on-state voltage (Vce(on)) of 3.2V at 15V gate-emitter voltage and 82A collector current, and a maximum power dissipation of 1040 W. Key switching parameters include a gate charge of 215 nC, turn-on delay (Td(on)) of 29 ns, and turn-off delay (Td(off)) of 192 ns at 25°C, with a reverse recovery time (trr) of 420 ns. Switching energy is rated at 4.95 mJ (on) and 2.78 mJ (off) under test conditions of 600V, 80A, 2 Ohm, and 15V. The IXYB82N120C3H1 is housed in a through-hole PLUS264™ package, suitable for demanding applications in industrial motor drives, power supplies, and renewable energy systems. It operates within an extended temperature range of -55°C to 150°C (TJ).

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)420 ns
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 82A
Supplier Device PackagePLUS264™
IGBT Type-
Td (on/off) @ 25°C29ns/192ns
Switching Energy4.95mJ (on), 2.78mJ (off)
Test Condition600V, 80A, 2Ohm, 15V
Gate Charge215 nC
Current - Collector (Ic) (Max)164 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)320 A
Power - Max1040 W

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