IXYA8N90C3D1
IGBT 900V 20A 125W C3 TO-263AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYA8N90C3D1 is a 900V, 20A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This surface-mount device, packaged in a TO-263AA, offers a maximum power dissipation of 125W. Key performance characteristics include a collector current of 20A (48A pulsed), a gate charge of 13.3 nC, and a collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-source voltage and 8A collector current. It features switching times of 16ns turn-on and 40ns turn-off at 25°C, with switching energies of 460µJ (on) and 180µJ (off). The reverse recovery time (trr) is 114 ns. Operating temperature ranges from -55°C to 175°C. This component is utilized in power switching applications across industries such as industrial automation and power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 114 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 8A |
| Supplier Device Package | TO-263AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 16ns/40ns |
| Switching Energy | 460µJ (on), 180µJ (off) |
| Test Condition | 450V, 8A, 30Ohm, 15V |
| Gate Charge | 13.3 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 48 A |
| Power - Max | 125 W |
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