IXYA8N250CHV
IGBT 2500V 29A TO263HVManufacturer: IXYS
Categories: Single IGBTs
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The IXYS XPT™ series IXYA8N250CHV is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This TO-263HV package device offers a 2500V collector-emitter breakdown voltage and a continuous collector current of 29A, with a pulsed capability of 70A. It features a maximum power dissipation of 280W and a low on-state voltage of 4V at 15V gate-emitter voltage and 8A collector current. The switching characteristics include a gate charge of 45nC, a reverse recovery time of 5ns, and on/off delays of 11ns/180ns at 25°C under test conditions of 1250V, 8A, 15 Ohm, and 15V. Operating across a temperature range of -55°C to 175°C, this surface mount component is suitable for use in power conversion, industrial motor drives, and renewable energy systems.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 5 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 8A |
| Supplier Device Package | TO-263HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | 11ns/180ns |
| Switching Energy | 2.6mJ (on), 1.07mJ (off) |
| Test Condition | 1250V, 8A, 15Ohm, 15V |
| Gate Charge | 45 nC |
| Current - Collector (Ic) (Max) | 29 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 70 A |
| Power - Max | 280 W |
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