IXYA60N65A5
650V, 60A, XP Gen5 A5 IGBT in TOManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYA60N65A5 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the Gen5 XPT™ series. This device offers a 650V collector-emitter breakdown voltage and a continuous collector current of 134A, with a pulsed current capability of 260A. It features a maximum power dissipation of 395W and a low on-state voltage (Vce(on)) of 1.35V at 15V gate-emitter voltage and 36A collector current. The IXYA60N65A5 is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding applications. Typical switching characteristics include a gate charge of 128 nC and switching energies of 600µJ (turn-on) and 1.45mJ (turn-off) under specified test conditions (400V, 36A, 5 Ohm, 15V). This component is designed for industrial power conversion, motor drive, and power supply applications. Its operating temperature range is -55°C to 175°C.
Additional Information
Series: Gen5 XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 36A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 28ns/230ns |
| Switching Energy | 600µJ (on), 1.45mJ (off) |
| Test Condition | 400V, 36A, 5Ohm, 15V |
| Gate Charge | 128 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 134 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 260 A |
| Power - Max | 395 W |
| Qualification | - |
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