IXYA55N65B5
650V, 55A, XPT Gen5 B5 IGBT inManufacturer: IXYS
Categories: Single IGBTs
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The IXYS Gen5 XPT™ IXYA55N65B5 is a 650V, 55A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power applications. This component features a maximum continuous collector current of 122A and a pulsed collector current of 250A, with a low on-state voltage (Vce(on)) of 1.5V at 15V gate-emitter voltage and 100A collector current. The device boasts a maximum power dissipation of 395W and a junction-to-case thermal resistance suitable for demanding thermal management. Switching characteristics include a typical turn-on delay (Td(on)) of 20ns and turn-off delay (Td(off)) of 200ns at 25°C, with switching energies of 550µJ (on) and 600µJ (off) under specified test conditions. The IXYA55N65B5 is housed in a TO-263 (D2PAK) surface-mount package, operating from -55°C to 175°C. This IGBT is integral to power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: Gen5 XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 100A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 20ns/200ns |
| Switching Energy | 550µJ (on), 600µJ (off) |
| Test Condition | 300V, 25A, 5Ohm, 15V |
| Gate Charge | 130 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 122 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 395 W |
| Qualification | - |
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