IXYA50N65C3-TRL
IGBT PT 650V 132A TO263AAManufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ series IXYA50N65C3-TRL is a 650 V, 132 A PT IGBT designed for high-power applications. This surface-mount device, housed in a TO-263AA package, offers a maximum continuous collector current of 132 A and a pulsed collector current of 250 A. With a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 36 A collector current, it delivers efficient power handling up to 600 W. Key parameters include a gate charge of 86 nC, reverse recovery time of 36 ns, and switching energies of 800 µJ (on) and 470 µJ (off) under typical test conditions. The operating temperature range is -55°C to 175°C. This component is suitable for demanding applications in sectors such as industrial power supplies, motor drives, and renewable energy systems. Packaged in tape and reel.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 36 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 36A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/90ns |
| Switching Energy | 800µJ (on), 470µJ (off) |
| Test Condition | 400V, 36A, 5Ohm, 15V |
| Gate Charge | 86 nC |
| Current - Collector (Ic) (Max) | 132 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 600 W |
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