IXYA30N120A4HV
DISC IGBT XPT-GENX4 TO-263D2Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX4™, XPT™ line, IXYA30N120A4HV is a high-voltage, high-performance Plasma Technology (PT) Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 106A (184A pulsed), with a maximum power dissipation of 500W. The Vce(on) is specified at 1.9V at 15V gate-emitter voltage and 25A collector current. Key switching characteristics include a gate charge of 57 nC and a reverse recovery time (trr) of 42 ns, with typical turn-on and turn-off delays of 15ns and 235ns respectively at 25°C under a 960V, 25A, 5 Ohm load condition. The IXYA30N120A4HV is housed in a TO-263HV (TO-263-3, D2PAK) surface-mount package suitable for operation across a wide temperature range of -55°C to 175°C. Common applications include power supplies, motor drives, and industrial power conversion systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 25A |
| Supplier Device Package | TO-263HV |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/235ns |
| Switching Energy | 4mJ (on), 3.4mJ (off) |
| Test Condition | 960V, 25A, 5Ohm, 15V |
| Gate Charge | 57 nC |
| Current - Collector (Ic) (Max) | 106 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 184 A |
| Power - Max | 500 W |
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