IXYA20N65C3D1
IGBT 650V 50A TO263AAManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXYA20N65C3D1 is a 650V, 50A XPT™, GenX3™ series IGBT designed for high-efficiency power switching applications. This surface mount device, housed in a TO-263AA package, offers a continuous collector current of 50A (105A pulsed) and a maximum power dissipation of 200W. Key parameters include a gate charge of 30 nC and a collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 20A collector current. Switching characteristics are defined by a turn-on delay (Td(on)) of 19ns and a turn-off delay (Td(off)) of 80ns at 25°C, with a reverse recovery time (trr) of 34 ns. Switching energy is rated at 430µJ (on) and 650µJ (off) under test conditions of 400V, 20A, and 20 Ohms. This component finds application in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 34 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-263AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 19ns/80ns |
| Switching Energy | 430µJ (on), 650µJ (off) |
| Test Condition | 400V, 20A, 20Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
IXYN120N120C3
IGBT MOD 1200V 240A SOT227B
IXYN82N120C3
IGBT MOD 1200V 105A 500W SOT227B
IXXN200N60B3
IGBT MOD 600V 280A 940W SOT227B
