IXYA20N120C4HV
IGBT 1200V 20A X4 HSPEED TO263D2Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYA20N120C4HV is a high-speed, GenX4™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT IGBT features a collector-emitter voltage (Vce) breakdown of 1200 V and a continuous collector current (Ic) of 68 A, with a pulsed capability of 120 A. The device exhibits a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-emitter voltage and 20 A collector current. Key performance parameters include a gate charge of 44 nC, switching energy of 4.4 mJ (on) and 1 mJ (off) at 960mV, 20A, 10 Ohm, 15V, and fast switching times of 14 ns (on) and 160 ns (off) at 25°C. With a maximum power dissipation of 375 W and an operating temperature range of -55°C to 175°C, this IGBT is suitable for surface mount applications in power conversion systems, motor drives, and industrial power supplies. The component is supplied in a TO-263HV package.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 53 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-263HV |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 14ns/160ns |
| Switching Energy | 4.4mJ (on), 1mJ (off) |
| Test Condition | 960mV, 20A, 10Ohm, 15V |
| Gate Charge | 44 nC |
| Current - Collector (Ic) (Max) | 68 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 375 W |
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