IXYA20N120C3HV-TRL
IXYA20N120C3HV TRLManufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™, GenX3™ series IXYA20N120C3HV-TRL is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This TO-263HV packaged device offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 40 A, with a pulsed current rating of 96 A. Key performance parameters include a low on-state voltage of 3.4 V at 15 V gate-emitter voltage and 20 A collector current, and a gate charge of 53 nC. The component exhibits switching characteristics with typical turn-on delay (Td(on)) of 20 ns and turn-off delay (Td(off)) of 90 ns at 25°C, supporting efficient high-frequency operation. With a maximum power dissipation of 278 W and an operating temperature range of -55°C to 175°C, this IGBT is suitable for use in industrial motor drives, power supplies, and uninterruptible power systems. It is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 29 ns |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-263HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/90ns |
| Switching Energy | 1.3mJ (on), 500µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 278 W |
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