IXYA20N120B4HV
IGBT 1200V 20A GENX4 XPT TO263D2Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX4™, XPT™ series IXYA20N120B4HV is a high-voltage Planar Trench (PT) Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 76A, with a pulsed capability of 130A. Optimized for high switching frequencies, it exhibits low switching losses with typical on-state switching energy of 3.9mJ and off-state switching energy of 1.6mJ at 20A and 15V. The IGBT exhibits a low on-state voltage of 2.1V at 20A and 15V gate-emitter voltage, and a gate charge of 44 nC. Packaged in a TO-263HV (D2PAK) surface-mount configuration, it is rated for a maximum power dissipation of 375W and operates across a temperature range of -55°C to 175°C. This device is suitable for use in high-power motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 47 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Supplier Device Package | TO-263HV |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/200ns |
| Switching Energy | 3.9mJ (on), 1.6mJ (off) |
| Test Condition | 960mV, 20A, 10Ohm, 15V |
| Gate Charge | 44 nC |
| Current - Collector (Ic) (Max) | 76 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 130 A |
| Power - Max | 375 W |
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