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IXYA20N120A4HV

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IXYA20N120A4HV

DISC IGBT XPT-GENX4 TO-263D2

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXYA20N120A4HV is a GenX4™, XPT™ series PT IGBT designed for high-voltage applications. This device features a 1200 V collector-emitter breakdown voltage and an 80 A continuous collector current (Ic), with a pulsed capability of 135 A (Icm). The Vce(on) is rated at a maximum of 1.9V at 15V Vge and 20A Ic. With a typical gate charge of 46 nC, the IGBT offers switching times of 12 ns turn-on and 275 ns turn-off at 25°C. The device dissipates up to 375 W and operates across a temperature range of -55°C to 175°C. The TO-263HV package facilitates surface mounting. Typical applications include power supplies, motor drives, and renewable energy systems.

Additional Information

Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)54 ns
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 20A
Supplier Device PackageTO-263HV
IGBT TypePT
Td (on/off) @ 25°C12ns/275ns
Switching Energy3.6mJ (on), 2.75mJ (off)
Test Condition800mV, 20A, 10Ohm, 15V
Gate Charge46 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)135 A
Power - Max375 W

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