IXYA15N65C3D1
IGBT PT 650V 38A TO263AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYA15N65C3D1 is a Generation 3, XPT series Insulated Gate Bipolar Transistor (IGBT) from IXYS. This PT IGBT features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 38A, with a pulsed capability of 80A. The device offers a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 15A collector current, and a nominal gate charge of 19nC. Designed for surface mounting, it is supplied in the TO-263AA package. With a maximum power dissipation of 200W and an operating temperature range of -55°C to 175°C, the IXYA15N65C3D1 exhibits switching times of 15ns turn-on and 68ns turn-off at specified test conditions. This component is utilized in power conversion applications, including industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 20 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/68ns |
| Switching Energy | 270µJ (on), 230µJ (off) |
| Test Condition | 400V, 15A, 20Ohm, 15V |
| Gate Charge | 19 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 200 W |
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