IXYA12N250CHV
DISC IGBT XPT-HI VOLTAGE TO-263DManufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™ series IXYA12N250CHV is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component offers a 2500V collector-emitter breakdown voltage and a continuous collector current of 28A, with a pulsed capability of 80A. The IXYA12N250CHV features a maximum power dissipation of 310W and a low on-state voltage of 4.5V at 15V gate-emitter voltage and 12A collector current. Switching characteristics include a typical turn-on delay of 12ns and turn-off delay of 167ns at 25°C, with a reverse recovery time of 16ns. The gate charge is 56 nC. This device is housed in a TO-263HV surface-mount package, suitable for operation across a wide temperature range of -55°C to 175°C. Applications include power factor correction, high-voltage power supplies, and industrial motor control.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 16 ns |
| Vce(on) (Max) @ Vge, Ic | 4.5V @ 15V, 12A |
| Supplier Device Package | TO-263HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | 12ns/167ns |
| Switching Energy | 3.56mJ (on), 1.7mJ (off) |
| Test Condition | 1250V, 12A, 10Ohm, 15V |
| Gate Charge | 56 nC |
| Current - Collector (Ic) (Max) | 28 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 310 W |
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