IXXX200N65B4
IGBT PT 650V 370A PLUS247-3Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX4™, XPT™ IXXX200N65B4. This Insulated Gate Bipolar Transistor (IGBT) features a 650 V collector-emitter breakdown voltage and a continuous collector current of 370 A. The IXXX200N65B4 offers a peak collector current of 1000 A and a maximum power dissipation of 1150 W. Key switching characteristics include a gate charge of 553 nC and switching energy figures of 4.4 mJ (on) and 2.2 mJ (off) under test conditions of 400 V, 100 A, 1 Ohm, and 15 V. The on-state voltage (Vce(on)) is a maximum of 1.7 V at 15 V gate-source voltage and 160 A collector current. This component is housed in a PLUS247™-3 package for through-hole mounting and operates within a temperature range of -55°C to 175°C. Applications include industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 160A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 62ns/245ns |
| Switching Energy | 4.4mJ (on), 2.2mJ (off) |
| Test Condition | 400V, 100A, 1Ohm, 15V |
| Gate Charge | 553 nC |
| Current - Collector (Ic) (Max) | 370 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 1000 A |
| Power - Max | 1150 W |
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