IXYS IXXX200N60B3 is a high-performance XPT™, GenX3™ series insulated gate bipolar transistor (IGBT) designed for demanding power applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 380 A (Ic), with a pulsed capability of up to 900 A (Icm). The IXXX200N60B3 offers a low on-state voltage (Vce(on)) of 1.7 V at 15 V gate-emitter voltage and 100 A collector current, contributing to efficient power dissipation with a maximum power rating of 1630 W. Switching characteristics include typical turn-on delay (Td(on)) of 48 ns and turn-off delay (Td(off)) of 160 ns at 25°C, with a reverse recovery time (trr) of 100 ns. Gate charge is specified at 315 nC. Packaged in a PLUS247™-3 through-hole configuration, this component is suitable for use in industrial motor drives, power supplies, and uninterruptible power supplies (UPS). Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 48ns/160ns |
| Switching Energy | 2.85mJ (on), 4.4mJ (off) |
| Test Condition | 360V, 100A, 1Ohm, 15V |
| Gate Charge | 315 nC |
| Current - Collector (Ic) (Max) | 380 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 900 A |
| Power - Max | 1630 W |
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