IXXX160N65C4
IGBT 650V 290A 940W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXX160N65C4 is a 650V, 290A Insulated Gate Bipolar Transistor (IGBT) from the GenX4™, XPT™ series. This PT IGBT features a low Vce(on) of 2.1V at 15V gate-emitter voltage and 160A collector current, with a maximum power dissipation of 940W. It offers excellent switching characteristics, with turn-on delay (Td(on)) of 52ns and turn-off delay (Td(off)) of 197ns at 25°C, and switching energies of 3.5mJ (on) and 1.3mJ (off) under test conditions of 400V, 80A, 1Ohm, 15V. With a maximum collector current (Ic) of 290A and pulsed collector current (Icm) of 800A, it is suitable for high-power applications. The device operates across a wide temperature range of -55°C to 175°C (TJ). Housed in a PLUS247™-3 package, this through-hole component is utilized in power supply, motor drive, and industrial automation sectors. The gate charge is 422 nC.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 160A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 52ns/197ns |
| Switching Energy | 3.5mJ (on), 1.3mJ (off) |
| Test Condition | 400V, 80A, 1Ohm, 15V |
| Gate Charge | 422 nC |
| Current - Collector (Ic) (Max) | 290 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 800 A |
| Power - Max | 940 W |
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