IXXX160N65B4
IGBT 650V 310A 940W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXX160N65B4 is a GenX4™, XPT™ series Power Transistor (PT) IGBT designed for high-power applications. This device features a collector-emitter breakdown voltage of 650 V and a continuous collector current (Ic) of up to 310 A, with a pulsed capability (Icm) of 860 A. It offers a maximum power dissipation of 940 W and a low on-state voltage (Vce(on)) of 1.8 V at 15 V gate-emitter voltage and 160 A collector current. Switching characteristics include on and off energies of 3.3 mJ and 1.88 mJ respectively, with typical turn-on and turn-off delays of 52 ns and 220 ns at 25°C. The IXXX160N65B4 is packaged in a Through Hole PLUS247™-3 configuration and operates across a temperature range of -55°C to 175°C. Its robust design makes it suitable for power factor correction, motor drives, and renewable energy systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 160A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 52ns/220ns |
| Switching Energy | 3.3mJ (on), 1.88mJ (off) |
| Test Condition | 400V, 80A, 1Ohm, 15V |
| Gate Charge | 425 nC |
| Current - Collector (Ic) (Max) | 310 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 860 A |
| Power - Max | 940 W |
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