IXYS XPT™, GenX4™ series IXXX140N65B4H1 is a 650V, 340A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device features a 1200W maximum power dissipation and a low Vce(on) of 1.9V at 15V gate-emitter voltage and 120A collector current. The IXXX140N65B4H1 offers efficient switching with typical on and off switching energies of 5.75mJ and 2.67mJ respectively, under a test condition of 400V and 100A. Its TO-247-3 variant package, designated as PLUS247™-3, facilitates through-hole mounting. With a wide operating temperature range of -55°C to 175°C (TJ) and a pulsed collector current capability of 840A, this IGBT is suitable for demanding sectors such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 105 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 120A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 54ns/270ns |
| Switching Energy | 5.75mJ (on), 2.67mJ (off) |
| Test Condition | 400V, 100A, 4.7Ohm, 15V |
| Gate Charge | 250 nC |
| Current - Collector (Ic) (Max) | 340 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 840 A |
| Power - Max | 1200 W |
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