IXXX110N65B4H1
IGBT 650V 240A 880W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX4™, XPT™ series IXXX110N65B4H1 is a 650V, 240A N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 880W. This device features a standard input type and a PLUS247™-3 through-hole package. Key specifications include a collector-emitter saturation voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 110A collector current. The component exhibits a gate charge of 183 nC and a reverse recovery time (trr) of 100 ns. Switching characteristics at 400V, 55A, 2 Ohm, 15V indicate turn-on delay (Td(on)) of 38ns and turn-off delay (Td(off)) of 156ns, with corresponding switching energies of 2.2mJ (on) and 1.05mJ (off). The operating temperature range is -55°C to 175°C (TJ). Applications for this IGBT include industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 38ns/156ns |
| Switching Energy | 2.2mJ (on), 1.05mJ (off) |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Gate Charge | 183 nC |
| Current - Collector (Ic) (Max) | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 630 A |
| Power - Max | 880 W |
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