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IXXX100N60C3H1

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IXXX100N60C3H1

IGBT 600V 170A 695W PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS GenX3™, XPT™ series IXXX100N60C3H1 is a 600V Punch-Through (PT) Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a continuous collector current rating of 170A, with a pulsed capability of 340A. The maximum power dissipation is 695W. Key electrical characteristics include a gate charge of 150 nC and a low on-state voltage drop of 2.2V at 15V Vge and 70A Ic. Switching performance is characterized by typical turn-on delay of 30ns and turn-off delay of 90ns at 25°C, with a reverse recovery time of 140ns. This device is housed in a PLUS247™-3 package suitable for through-hole mounting. It is commonly utilized in industrial power conversion, motor drives, and renewable energy systems.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-
Input TypeStandard
Reverse Recovery Time (trr)140 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 70A
Supplier Device PackagePLUS247™-3
IGBT TypePT
Td (on/off) @ 25°C30ns/90ns
Switching Energy2mJ (on), 950µJ (off)
Test Condition360V, 70A, 2Ohm, 15V
Gate Charge150 nC
Current - Collector (Ic) (Max)170 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)340 A
Power - Max695 W

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