IXXX100N60B3H1
IGBT 600V 200A 695W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™, XPT™ series IXXX100N60B3H1 is a 600V, 200A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This PLUS247™-3 packaged device features a maximum collector power dissipation of 695W. Key performance parameters include a Vce(on) of 1.8V at 15V gate-emitter voltage and 70A collector current, with a gate charge of 143 nC. The IGBT exhibits typical turn-on delay (Td(on)) of 30ns and turn-off delay (Td(off)) of 120ns at 25°C, with a rated reverse recovery time (trr) of 140ns. Switching energy is specified at 1.9mJ (on) and 2mJ (off) under test conditions of 360V, 70A, 2 Ohm, and 15V. This component is suitable for industrial motor drives, uninterruptible power supplies (UPS), and solar inverters. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 70A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/120ns |
| Switching Energy | 1.9mJ (on), 2mJ (off) |
| Test Condition | 360V, 70A, 2Ohm, 15V |
| Gate Charge | 143 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 440 A |
| Power - Max | 695 W |
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