IXXR110N65B4H1
IGBT 650V 150A 455W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXR110N65B4H1 is a GenX4™, XPT™ series IGBT designed for high-power applications. This through-hole component offers a collector-emitter voltage of 650 V and a continuous collector current of 150 A, with a pulsed capability of 460 A. Featuring a maximum power dissipation of 455 W, it operates efficiently across a temperature range of -55°C to 175°C. The ISOPLUS247™ package ensures robust thermal management. Key switching characteristics include a gate charge of 183 nC, switching energies of 2.2 mJ (on) and 1.05 mJ (off) at 400 V, 55 A, 2 Ohm, 15 V, and a reverse recovery time of 100 ns. The on-state voltage (Vce(on)) is a maximum of 2.2 V at 15 V gate drive and 110 A collector current. This component is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 110A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 38ns/156ns |
| Switching Energy | 2.2mJ (on), 1.05mJ (off) |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Gate Charge | 183 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 460 A |
| Power - Max | 455 W |
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