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IXXQ30N60B3M

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IXXQ30N60B3M

IGBT

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXXQ30N60B3M from the XPT™, GenX3™ series is a 600 V, 33 A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a maximum collector power dissipation of 90 W and a pulsed collector current capability of 140 A. The IGBT Type is standard with an input capacitance (Gate Charge) of 39 nC. Key switching parameters include turn-on delay (Td(on)) of 23 ns and switching energy figures of 550 µJ (on) and 800 µJ (off) at the specified test conditions of 400 V, 24 A, 10 Ohm, and 15 V. The collector-emitter saturation voltage (Vce(on)) is a maximum of 1.85 V at 15 V gate-emitter voltage and 24 A collector current. The component is packaged in a TO-3P-3, SC-65-3 (TO-3P) through-hole mounting configuration, suitable for operation across an extended temperature range of -55°C to 175°C. This component finds application in power supplies, motor drives, and industrial automation.

Additional Information

Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)36 ns
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 24A
Supplier Device PackageTO-3P
IGBT Type-
Td (on/off) @ 25°C23ns/150ns
Switching Energy550µJ (on), 800µJ (off)
Test Condition400V, 24A, 10Ohm, 15V
Gate Charge39 nC
Current - Collector (Ic) (Max)33 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)140 A
Power - Max90 W

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