IXXP12N65B4D1
IGBT 650V 38A TO220-3Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXP12N65B4D1 is a 650V, 38A Insulated Gate Bipolar Transistor (IGBT) from the XPT™, GenX4™ series. This device features a maximum collector current of 38A, with a pulsed capability of 70A. The IGBT exhibits a forward transconductance of 38 S and a gate charge of 34 nC. It has a collector-emitter saturation voltage (Vce(on)) of 1.95V at 15V gate-emitter voltage and 12A collector current. Switching characteristics include an on-state energy of 440µJ and an off-state energy of 220µJ, with typical turn-on delay (Td(on)) of 13ns and turn-off delay (Td(off)) of 158ns at 25°C. Designed for through-hole mounting in a TO-220-3 package, this component operates across a temperature range of -55°C to 175°C. Applications include power factor correction and motor drives.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 43 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 13ns/158ns |
| Switching Energy | 440µJ (on), 220µJ (off) |
| Test Condition | 400V, 12A, 20Ohm, 15V |
| Gate Charge | 34 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 70 A |
| Power - Max | 160 W |
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