IXXN340N65B4
IGBT MODULE DISC IGBT SOT227BManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS GenX4™, XPT™ series IXXN340N65B4 is a Power Transistor module featuring a 650 V collector-emitter breakdown voltage. This IGBT module offers a continuous collector current (Ic) of 520 A and a pulsed collector current (Icm) of 1200 A. With a maximum power dissipation of 1500 W, it utilizes a PT IGBT type with a standard input. The module is designed for chassis mounting within the SOT-227B package. Key performance parameters include a gate charge of 553 nC, a reverse recovery time (trr) of 65 ns, and switching energies of 4.4 mJ (on) and 2.2 mJ (off) at 400 V, 100 A, 1 Ohm, 15 V. The on-state voltage drop (Vce(on)) is a maximum of 1.7 V at 15 V, 160 A, with turn-on and turn-off delays (Td) of 62 ns and 245 ns respectively at 25°C. This component operates across a temperature range of -55°C to 175°C (TJ). It finds application in power conversion, motor drives, and industrial power systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 65 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 160A |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 62ns/245ns |
| Switching Energy | 4.4mJ (on), 2.2mJ (off) |
| Test Condition | 400V, 100A, 1Ohm, 15V |
| Gate Charge | 553 nC |
| Current - Collector (Ic) (Max) | 520 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 1200 A |
| Power - Max | 1500 W |
Request a Quote
Clients Also Buy
IXXH80N65B4
IGBT 650V 160A 625W TO247AD
IXXX160N65B4
IGBT 650V 310A 940W PLUS247
IXXX110N65B4H1
IGBT 650V 240A 880W PLUS247
