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IXXK300N60C3

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IXXK300N60C3

IGBT 600V 510A 2300W TO264

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXXK300N60C3 is a Power Transistor, specifically an IGBT from the GenX3™, XPT™ series. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current (Ic) capability of 510 A under typical test conditions (400 V, 100 A, 1 Ohm, 15 V). With a maximum power dissipation of 2300 W and a pulsed collector current (Icm) of 1075 A, it is designed for high-power switching applications. The device exhibits a Vce(on) of 2V at 15V gate-emitter voltage and 100A collector current. Switching characteristics include turn-on delay (Td(on)) of 50 ns and turn-off delay (Td(off)) of 160 ns at 25°C. The gate charge is 438 nC. This IGBT is housed in a TO-264-3, TO-264AA (IXXK) through-hole package, suitable for operation across a wide temperature range of -55°C to 175°C (TJ). It finds application in demanding power conversion systems within the industrial and renewable energy sectors.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 100A
Supplier Device PackageTO-264 (IXXK)
IGBT TypePT
Td (on/off) @ 25°C50ns/160ns
Switching Energy3.35mJ (on), 1.9mJ (off)
Test Condition400V, 100A, 1Ohm, 15V
Gate Charge438 nC
Current - Collector (Ic) (Max)510 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)1075 A
Power - Max2300 W

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