IXXK200N65B4
IGBT 650V 370A 1150W TO264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXXK200N65B4 is a 650V, 370A Trench IGBT from the GenX4™, XPT™ series. This Power Transistor (PT) IGBT features a maximum collector current of 370A, with a pulsed collector current capability of 1000A. It offers a low collector-emitter saturation voltage (Vce(on)) of 1.7V at 15V gate-emitter voltage and 160A collector current, under the test condition of 400V, 100A, 1 Ohm, 15V. The switching energy is specified at 4.4mJ (on) and 2.2mJ (off), with typical turn-on and turn-off delays of 62ns and 245ns respectively at 25°C. The device has a gate charge of 553 nC and a maximum power dissipation of 1150W. Packaged in a TO-264-3, TO-264AA (IXXK) through-hole configuration, it operates across a temperature range of -55°C to 175°C. This component is suitable for high-power applications in industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 160A |
| Supplier Device Package | TO-264 (IXXK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 62ns/245ns |
| Switching Energy | 4.4mJ (on), 2.2mJ (off) |
| Test Condition | 400V, 100A, 1Ohm, 15V |
| Gate Charge | 553 nC |
| Current - Collector (Ic) (Max) | 370 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 1000 A |
| Power - Max | 1150 W |
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