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IXXK200N60B3

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IXXK200N60B3

IGBT 600V 380A 1630W TO264

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS GenX3™, XPT™ Series IXXK200N60B3 is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This PT IGBT offers a continuous collector current of 380A and a pulsed collector current of 900A, with a maximum power dissipation of 1630W. Key performance metrics include a low collector-emitter saturation voltage of 1.7V at 15V gate-emitter voltage and 100A collector current, and switching times of 48ns turn-on and 160ns turn-off at 25°C. The device features a gate charge of 315 nC and switching energies of 2.85mJ (on) and 2.9mJ (off). The IXXK200N60B3 is packaged in a TO-264 through-hole format and operates across a wide temperature range of -55°C to 175°C. This component is suitable for use in industrial automation, motor control, and power supply systems.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 100A
Supplier Device PackageTO-264 (IXXK)
IGBT TypePT
Td (on/off) @ 25°C48ns/160ns
Switching Energy2.85mJ (on), 2.9mJ (off)
Test Condition360V, 100A, 1Ohm, 15V
Gate Charge315 nC
Current - Collector (Ic) (Max)380 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)900 A
Power - Max1630 W

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