IXXK100N60C3H1
IGBT PT 600V 170A TO264Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXXK100N60C3H1 from the GenX3™, XPT™ series is a Planar Trench Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 170A, with a pulsed capability of 340A. The device offers a maximum power dissipation of 695W and a low on-state voltage of 2.2V at 15V gate-emitter voltage and 70A collector current. Switching characteristics include a typical gate charge of 150 nC, with on/off delays specified at 30ns/90ns at 25°C. Reverse recovery time is 140ns. The IXXK100N60C3H1 is housed in a TO-264 (IXXK) package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This IGBT is suitable for applications in industrial motor control, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 70A |
| Supplier Device Package | TO-264 (IXXK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/90ns |
| Switching Energy | 2mJ (on), 950µJ (off) |
| Test Condition | 360V, 70A, 2Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 170 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 340 A |
| Power - Max | 695 W |
Request a Quote
Clients Also Buy
IXXH50N60B3D1
IGBT 600V 120A 600W TO247
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXYK120N120C3
IGBT 1200V 240A 1500W TO264
