IXXK100N60B3H1
IGBT PT 600V 200A TO264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ series IXXK100N60B3H1 is a 600V, 200A insulated gate bipolar transistor (IGBT) with a maximum power dissipation of 695W. This PT IGBT features a standard input type and is housed in a TO-264 (IXXK) package for through-hole mounting. Key electrical parameters include a collector current of 200A (440A pulsed), a Vce(on) of 1.8V at 15V Vge and 70A Ic, and a gate charge of 143nC. Switching characteristics are defined by a reverse recovery time of 140ns and switching energy of 1.9mJ (on) and 2mJ (off) under test conditions of 360V, 70A, 2 Ohm, and 15V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 70A |
| Supplier Device Package | TO-264 (IXXK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/120ns |
| Switching Energy | 1.9mJ (on), 2mJ (off) |
| Test Condition | 360V, 70A, 2Ohm, 15V |
| Gate Charge | 143 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 440 A |
| Power - Max | 695 W |
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