IXXH80N65B4H1
IGBT PT 650V 160A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX4™, XPT™ series IXXH80N65B4H1 is a 650 V, 160 A Trench IGBT with a TO-247AD package. This device features a maximum collector power dissipation of 625 W and a continuous collector current of 160 A, with a pulsed capability of 430 A. The IGBT exhibits a low collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 80A collector current. Switching characteristics include a gate charge of 120 nC, and typical turn-on and turn-off delays of 38 ns and 120 ns respectively at 25°C, with switching energies of 3.77 mJ (on) and 1.2 mJ (off) under specified test conditions. Operating temperature ranges from -55°C to 175°C. This component is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 150 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 38ns/120ns |
| Switching Energy | 3.77mJ (on), 1.2mJ (off) |
| Test Condition | 400V, 80A, 3Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 430 A |
| Power - Max | 625 W |
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