IXXH80N65B4D1
IGBT PT 650V 180A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH80N65B4D1 is a 650V, 180A PT IGBT from the XPT™, GenX4™ series, housed in a TO-247AD package. This through-hole component offers a maximum continuous collector current of 180A and a pulsed collector current of 430A. With a collector-emitter saturation voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 80A collector current, it delivers efficient power handling up to 625W. Key performance parameters include a gate charge of 120 nC, a reverse recovery time (trr) of 100 ns, and switching energies of 3.36mJ (turn-on) and 1.83mJ (turn-off) under the specified test conditions of 400V, 80A, 3 Ohm, and 15V. The device operates across a temperature range of -55°C to 175°C (TJ). This component finds application in power conversion systems for industrial motor drives, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 80A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 26ns/112ns |
| Switching Energy | 3.36mJ (on), 1.83mJ (off) |
| Test Condition | 400V, 80A, 3Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 180 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 430 A |
| Power - Max | 625 W |
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