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IXXH80N65B4

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IXXH80N65B4

IGBT 650V 160A 625W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXXH80N65B4 is a 650V, 160A N-channel Trench IGBT from the GenX4™, XPT™ series, packaged in a TO-247AD (IXXH) for through-hole mounting. This device features a maximum collector power dissipation of 625W and a continuous collector current of 160A at 25°C, with a pulsed capability up to 430A. Its on-state voltage (Vce(on)) is a maximum of 2V at 15V gate-emitter voltage and 80A collector current. Switching characteristics include a gate charge of 120 nC and typical turn-on delay (Td(on)) of 38ns and turn-off delay (Td(off)) of 120ns at 25°C, with switching energy specified at 3.77mJ (on) and 1.2mJ (off) under test conditions of 400V, 80A, 3Ohm, and 15V. The operating temperature range is from -55°C to 175°C. This component is suitable for applications in high-power switching, industrial motor drives, and power factor correction circuits.

Additional Information

Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
Supplier Device PackageTO-247AD (IXXH)
IGBT TypePT
Td (on/off) @ 25°C38ns/120ns
Switching Energy3.77mJ (on), 1.2mJ (off)
Test Condition400V, 80A, 3Ohm, 15V
Gate Charge120 nC
Current - Collector (Ic) (Max)160 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)430 A
Power - Max625 W

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