IXXH75N60C3D1
IGBT 600V 150A 750W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH75N60C3D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This PT IGBT features a 600 V breakdown voltage and a continuous collector current rating of 150 A, with a pulsed capability of 300 A. The device offers a maximum power dissipation of 750 W and a low collector-emitter saturation voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 60A collector current. With a gate charge of 107 nC and switching times of 35ns (on) and 90ns (off) at 25°C, it is suitable for demanding applications requiring efficient power switching. The IXXH75N60C3D1 is packaged in a standard TO-247AD through-hole mount, operating across a wide temperature range of -55°C to 175°C. This component is widely utilized in industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 35ns/90ns |
| Switching Energy | 1.6mJ (on), 800µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 107 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 750 W |
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