IXXH75N60C3
IGBT 600V 150A 750W TO247Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXXH75N60C3 is a 600V, 150A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This Power Transistor (PT) offers a maximum power dissipation of 750W and a collector current of 150A, with a pulsed collector current capability of 300A. Key electrical parameters include a Vce(on) of 2.3V at 15V gate voltage and 60A collector current. The device exhibits a gate charge of 107 nC and switching times of 35ns turn-on and 90ns turn-off, with switching energy specified at 1.6mJ (on) and 800µJ (off) under test conditions of 400V, 60A, 5 Ohm, and 15V. This component is designed for through-hole mounting in a TO-247-3 package, specifically the TO-247AD (IXXH) supplier device package. The IXXH75N60C3 is suitable for applications in power conversion, motor drives, and industrial power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 35ns/90ns |
| Switching Energy | 1.6mJ (on), 800µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 107 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 750 W |
Request a Quote
Clients Also Buy
IXXH50N60B3D1
IGBT 600V 120A 600W TO247
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXYK120N120C3
IGBT 1200V 240A 1500W TO264
