IXXH75N60B3
DISC IGBT XPT-GENX3 TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH75N60B3 is a high-performance Discrete IGBT from the XPT™, GenX3™ series, available in a TO-247AD package. This Power Transistor (PT) IGBT offers a collector-emitter breakdown voltage of 600V and a continuous collector current (Ic) of 160A, with a pulsed collector current (Icm) capability of 300A. It features a low on-state voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 60A collector current, and a maximum power dissipation of 750W. Engineered for demanding applications, it exhibits a gate charge of 107 nC and switching times of 35ns (on) and 118ns (off) under specified test conditions. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 75 ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 60A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 35ns/118ns |
| Switching Energy | 1.7mJ (on), 1.5mJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 107 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 750 W |
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