IXXH60N65B4H1
IGBT 650V 116A 380W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH60N65B4H1 is a 650V, 116A insulated gate bipolar transistor (IGBT) from the GenX4™, XPT™ series. This PT IGBT features a nominal collector current of 116A and a pulsed collector current of 230A, with a maximum power dissipation of 380W. It exhibits a low on-state voltage of 2V at 15V gate-emitter voltage and 60A collector current. Switching characteristics include a turn-on delay of 37ns and a turn-off delay of 145ns at 25°C, with switching energies of 3.13mJ (on) and 1.15mJ (off) under test conditions of 400V, 60A, 5 Ohm, and 15V. The device operates within a temperature range of -55°C to 175°C and is housed in a TO-247AD package for through-hole mounting. This component is utilized in applications such as motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 150 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 60A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 37ns/145ns |
| Switching Energy | 3.13mJ (on), 1.15mJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 116 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 230 A |
| Power - Max | 380 W |
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