IXXH50N60C3D1
IGBT 600V 100A 600W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH50N60C3D1 is a 600V, 100A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This device features a 600W maximum power dissipation and is packaged in a TO-247AD (IXXH) through-hole configuration. Key parameters include a collector current (Ic) of 100A, a pulsed collector current (Icm) of 200A, and a low on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 36A collector current. The transistor exhibits a gate charge of 64 nC and a reverse recovery time (trr) of 25 ns under specified test conditions (360V, 36A, 5 Ohm, 15V). Switching energy is rated at 720 µJ (turn-on) and 330 µJ (turn-off), with typical turn-on and turn-off delays of 24 ns and 62 ns respectively at 25°C. This component is suitable for applications in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 36A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 24ns/62ns |
| Switching Energy | 720µJ (on), 330µJ (off) |
| Test Condition | 360V, 36A, 5Ohm, 15V |
| Gate Charge | 64 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 600 W |
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