IXXH50N60C3
IGBT 600V 100A 600W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXXH50N60C3 is a 600V, 100A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This PT IGBT features a collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) of 100A, with a pulsed collector current (Icm) of 200A. The device offers a maximum power dissipation of 600W and a low on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 36A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 24ns and turn-off delay (Td(off)) of 62ns at 25°C, with switching energies of 720µJ (on) and 330µJ (off) under specified test conditions. The IXXH50N60C3 is housed in a TO-247AD package suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C. This component is utilized in applications such as industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 36A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 24ns/62ns |
| Switching Energy | 720µJ (on), 330µJ (off) |
| Test Condition | 360V, 36A, 5Ohm, 15V |
| Gate Charge | 64 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 600 W |
Request a Quote
Clients Also Buy
IXXH50N60B3D1
IGBT 600V 120A 600W TO247
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXYK120N120C3
IGBT 1200V 240A 1500W TO264
