IXXH50N60B3D1
IGBT 600V 120A 600W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ series IGBT IXXH50N60B3D1. This insulated gate bipolar transistor offers a 600V collector-emitter breakdown voltage and a continuous collector current of 120A, with a pulsed capability of 200A. Featuring a 600W maximum power dissipation and a low on-state voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 36A collector current. The device exhibits a typical gate charge of 70 nC and a reverse recovery time (trr) of 25 ns. Switching energy is rated at 670µJ (on) and 740µJ (off) under test conditions of 360V, 36A, 5 Ohm, 15V. The IXXH50N60B3D1 is housed in a TO-247AD (IXXH) package for through-hole mounting and is commonly utilized in high-power switching applications across industrial, power supply, and motor control sectors.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 36A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 27ns/100ns |
| Switching Energy | 670µJ (on), 740µJ (off) |
| Test Condition | 360V, 36A, 5Ohm, 15V |
| Gate Charge | 70 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 600 W |
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