IXXH40N65C4D1
IGBT PT 650V 110A TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH40N65C4D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the XPT™, GenX4™ series. This PT IGBT offers a 650V collector-emitter breakdown voltage and a continuous collector current rating of 110A (215A pulsed). Designed for demanding applications, it dissipates up to 455W and features a low on-state voltage of 2.3V at 15V gate-emitter voltage and 40A collector current. With a gate charge of 68nC and switching energy figures of 1.6mJ (on) and 420µJ (off) under test conditions of 400V, 40A, 5 Ohm, and 15V, this device is suitable for power conversion systems in industries such as industrial, motor control, and renewable energy. The IXXH40N65C4D1 is packaged in a TO-247-3 through-hole configuration and operates across a temperature range of -55°C to 175°C.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 62 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/100ns |
| Switching Energy | 1.6mJ (on), 420µJ (off) |
| Test Condition | 400V, 40A, 5Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 215 A |
| Power - Max | 455 W |
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