IXXH40N65B4D1
IGBT 650V 115A TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™, GenX4™ series IXXH40N65B4D1 is a 650V, 115A Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This through-hole component, housed in a TO-247-3 package, offers a maximum continuous collector current of 115A and a pulsed collector current of 225A. With a maximum power dissipation of 455W, it features a low collector-emitter saturation voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 40A collector current. Key switching characteristics include a gate charge of 66nC, typical turn-on delay of 20ns and turn-off delay of 115ns at 25°C, and a reverse recovery time of 60ns. Switching energy figures are 1.4mJ (on) and 800µJ (off) under specified test conditions. This device is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/115ns |
| Switching Energy | 1.4mJ (on), 800µJ (off) |
| Test Condition | 400V, 40A, 5Ohm, 15V |
| Gate Charge | 66 nC |
| Current - Collector (Ic) (Max) | 115 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 455 W |
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