IXXH40N65B4
IGBT 650V 120A 455W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXXH40N65B4 is a 650V, 120A Insulated Gate Bipolar Transistor (IGBT) from the GenX4™ and XPT™ series. This PT IGBT features a maximum collector power dissipation of 455W and a low Vce(on) of 1.8V at 15V gate-emitter voltage and 40A collector current. It offers excellent switching performance with typical turn-on delay of 28ns and turn-off delay of 144ns at 25°C. The component has a collector current pulse rating of 240A and a gate charge of 77 nC. Designed for robust operation, it supports an extended temperature range from -55°C to 175°C. The IXXH40N65B4 is provided in a TO-247AD package suitable for through-hole mounting and finds application in high-power switching and power conversion systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 40A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/144ns |
| Switching Energy | 1.4mJ (on), 560µJ (off) |
| Test Condition | 400V, 40A, 5Ohm, 15V |
| Gate Charge | 77 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 455 W |
Request a Quote
Clients Also Buy
IXXH80N65B4
IGBT 650V 160A 625W TO247AD
IXXX160N65B4
IGBT 650V 310A 940W PLUS247
IXXX110N65B4H1
IGBT 650V 240A 880W PLUS247
