IXXH30N65C4D1
IGBT 650V 62A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS XPT™, GenX4™ series IXXH30N65C4D1 is a 650 V, 62 A insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This device features a maximum collector current of 62 A and a pulsed collector current of 136 A, with a low collector-emitter saturation voltage of 2.5 V at 15 V gate-emitter voltage and 30 A collector current. The IGBT offers a switching energy of 1.1 mJ (turn-on) and 400 µJ (turn-off) under test conditions of 400 V, 30 A, 15 O, and 15 V. It has a gate charge of 47 nC and typical turn-on and turn-off delays of 20 ns and 140 ns, respectively, at 25°C. The component is housed in a TO-247AD (IXXH) package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 175°C. This IGBT is utilized in industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 72 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/140ns |
| Switching Energy | 1.1mJ (on), 400µJ (off) |
| Test Condition | 400V, 30A, 15Ohm, 15V |
| Gate Charge | 47 nC |
| Current - Collector (Ic) (Max) | 62 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 136 A |
| Power - Max | 230 W |
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